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BUK7E07-55B Datasheet, NXP Semiconductors

BUK7E07-55B fet equivalent, n-channel trenchmos standard level fet.

BUK7E07-55B Avg. rating / M : 1.0 rating-13

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BUK7E07-55B Datasheet

Features and benefits

I Very low on-state resistance I 175 °C rated I Q101 compliant I Standard level compatible 1.3 Applications I Automotive systems I Motors, lamps and solenoids I General .

Application

1.2 Features I Very low on-state resistance I 175 °C rated I Q101 compliant I Standard level compatible 1.3 Applicati.

Description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in Automotive cr.

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